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  ds28003 rev. d-2 1 of 2 1n5391/s-1n5399/s www.diodes.com  diodes incorporated features 1n5391/s - 1n5399/s 1.5a rectifier s suffix designates do-41 package no suffix designates do-15 package a a b c d do-41 plastic do-15 dim min max min max a 25.40  25.40  b 4.06 5.21 5.50 7.62 c 0.71 0.864 0.686 0.889 d 2.00 2.72 2.60 3.60 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25  c unless otherwise specified  diffused junction  fast switching for high efficiency  high current capability and low forward voltage drop  low reverse leakage current  surge overload rating to 50a peak  plastic material - ul flammability classification rating 94v-0 mechanical data  case: molded plastic  terminals: plated leads solderable per mil-std-202, method 208  polarity: cathode band  weight: do-41 0.30 grams (approx.) do-15 0.40 grams (approx.)  mounting position: any  marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol 1n 5391/s 1n 5392/s 1n 5393/s 1n 5395/s 1n 5397/s 1n 5398/s 1n 5399/s unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current (note 1) @ t a = 70  c i o 1.5 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 50 a forward voltage drop @ i f = 1.5a v fm 1.1 v peak reverse leakage current @ t a = 25  c at rated dc blocking voltage @ t a = 100  c i rm 5.0 50  a typical junction capacitance (note 2) c j 20 pf typical thermal resistance junction to lead r  jl 25 k/w typical thermal resistance junction to ambient (note 1) r  ja 55 k/w operating and storage temperature range t j, t stg -65 to +150  c notes: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v dc.
ds28003 rev. d-2 2 of 2 1n5391/s-1n5399/s www.diodes.com 0.01 0.1 1.0 10 0.6 0.8 1.0 1.2 1.4 1.6 i , instantane o us f o rward current (a) f v , instantaneous forward voltage (v) f fig. 2 typical forward characteristics t=25c j 25 50 75 100 125 150 175 t ambient temperature (oc) a fi g . 1, forward current deratin g curve i , average forward rectified current (a ) (av) 0 0.5 1.0 1.5 1.0 10 100 1.0 10 100 c , c apa c itan c e ( pf ) j v , reverse voltage (v) r fig. 4 typical junction capacitance t=25c j f = 1mhz 1.0 10 100 0 10 20 30 40 50 number of cycles at 60hz fig. 3 maximum non-repetitive peak forward surge current i , peak f o rward surge current (a) fsm 8.3 ms single half sine-wave (jedec method)


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